| Numéro |
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
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| Page(s) | C2-185 - C2-191 | |
| DOI | https://doi.org/10.1051/jp4:1991223 | |
J. Phys. IV France 02 (1991) C2-185-C2-191
DOI: 10.1051/jp4:1991223
ANALYSIS OF CVD BY SURFACE ANALYSIS TECHNIQUES AND IN-SITU MASS SPECTROMETRY
P.A.C. GROENEN, J.G.A. HÖLSCHER and H.H. BRONGERSMADepartment of Physics, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands
Abstract
The reaction between WF6 and Si has been studied with a specially designed mass spectrometer set-up, and by AES depth profiling. The time development of the reaction is monitored via the reaction product SiF4. Two stages can be distinguished. The first stage is a quick rise to a maximum SiF4 signal. During this stage most of the F is absorbed in the Si, forming a reaction layer of SiFn moieties. The tungsten covers the surface in an open structure. In the second stage, these SiFn moieties desorb after the addition of the necessary F atoms, supplied by adsorbing WF6. The total amount of SiFn moieties decays exponentially with time. The rate limiting step is the formation of SiF4 with an activation energy of 1.6 ± 0.2 eV, probably the addition of F to SiF3.
© EDP Sciences 1991