J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
|Page(s)||C2-55 - C2-61|
J. Phys. IV France 02 (1991) C2-55-C2-61
MECHANISM OF STEP COVERAGE FORMATION OF SiO2 FILMS FROM TEOS AND EFFECTS OF GAS PHASE ADDITIVES STUDIED BY MICRO/MACROCAVITY METHODY. EGASHIRA, T. SORITA, S. SHIGA, K. IKUTA and H. KOMIYAMA
Department of Chemical Engineering, Faculty of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunko-ku, Tokyo 113, Japan
The mechanism of SiO2 deposition by pyrolysis of TEOS at 973K was studied by the micro/macrocavity method proposed previously by the authors. We analyzed the deposition-rate profiles in macrocavities (0.1 - 0.5 mm x 10 mm) and microcavities (3µm x 2µm), based on a model of diffusion and chemical reaction occurring simultaneously. Analysis of deposition-rate profiles under reduced pressure (2 Torr) and medium pressure (60 Torr) showed the existence of two kinds of intermediate species, a highly active one and low active one. The effects of gas phase additives (NH3 or H2O) were also examined. Conformal depositions in microcavities were achieved by the addition of H2O in this reaction system.
© EDP Sciences 1991