| Numéro |
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
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| Page(s) | C2-19 - C2-31 | |
| DOI | https://doi.org/10.1051/jp4:1991202 | |
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
J. Phys. IV France 02 (1991) C2-19-C2-31
DOI: 10.1051/jp4:1991202
Delft University of Technology, Faculty of Applied Physics, PO Box 5046, 2600 GA Delft, The Netherlands
© EDP Sciences 1991
J. Phys. IV France 02 (1991) C2-19-C2-31
DOI: 10.1051/jp4:1991202
THE MODELING OF LPCVD IN SINGLE-WAFER REACTORS AS A TOOL FOR PROCESS OPTIMIZATION AND EQUIPMENT DESIGN
C.R. KLEIJNDelft University of Technology, Faculty of Applied Physics, PO Box 5046, 2600 GA Delft, The Netherlands
Abstract
An overview is given of the modeling of the hydrodynamics, transport phenomena and chemical reactions in single-wafer LPCVD reactors, both at the macroscopic (reactor-scale) and at the microscopic (feature-scale) level. Examples of modeling results for single-wafer silicon LPCVD from silane and tungsten LPCVD from tungsten hexafluoride and hydrogen are presented and comparisons are made with experimental results. The use of mathematical models in the design and optimization of single-wafer LPCVD reactors and processes is discussed.
© EDP Sciences 1991