Issue
J. Phys. IV France
Volume 132, March 2006
Page(s) 351 - 354
DOI https://doi.org/10.1051/jp4:2006132067
Published online 11 March 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 351-354

DOI: 10.1051/jp4:2006132067

The exciplex emission of organic light emitting diodes with 5, 6, 11, 12-tetraphenylnaphthacene (Rubrene)-doped hole transport layer

Ching-Huei Tseng1, Uerng-Yih Ueng1 and Meiso Yokoyama2

1  Department of Electrical Engineering, National Sun Yat-Sen University Kaohsiung, Taiwan, R.O.C
2  Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan, R.O.C


Abstract
Exciplex electroluminescence of indium-tin-oxide glass (ITO)/[ 4$^\prime$,4 $^{\prime\prime}$-tris[3-methylphenyl (phenyl) amino]triphenylamine] (m-MTDATA)/[Naphthyl-substituted benzidine derivative] (NPB)/NPB:rubrene/BCP/LiF/Al devices have been investigated. The ITO/MTDATA/NPB/NPB:Rubrene/BCP/LiF/Al devices show emission color adiustable by the hybrid exciplex interaction of Rubrene with NPB, and this exciplex becomes the primary recombination center at a critical Rubrene doping concentration. We obtained its emission was green-white light and the green emission is exciplex emission of the binary-blend NPB:rubrene layer. It is demonstrated at the PL spectra.



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