Issue |
J. Phys. IV France
Volume 132, March 2006
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Page(s) | 351 - 354 | |
DOI | https://doi.org/10.1051/jp4:2006132067 | |
Published online | 11 March 2006 |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 351-354
DOI: 10.1051/jp4:2006132067
1 Department of Electrical Engineering, National Sun Yat-Sen University Kaohsiung, Taiwan, R.O.C
2 Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan, R.O.C
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 351-354
DOI: 10.1051/jp4:2006132067
The exciplex emission of organic light emitting diodes with 5, 6, 11, 12-tetraphenylnaphthacene (Rubrene)-doped hole transport layer
Ching-Huei Tseng1, Uerng-Yih Ueng1 and Meiso Yokoyama21 Department of Electrical Engineering, National Sun Yat-Sen University Kaohsiung, Taiwan, R.O.C
2 Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan, R.O.C
Abstract
Exciplex electroluminescence of indium-tin-oxide glass
(ITO)/[ 4,4
-tris[3-methylphenyl (phenyl)
amino]triphenylamine] (m-MTDATA)/[Naphthyl-substituted benzidine
derivative] (NPB)/NPB:rubrene/BCP/LiF/Al devices have been
investigated. The ITO/MTDATA/NPB/NPB:Rubrene/BCP/LiF/Al devices show
emission color adiustable by the hybrid exciplex interaction of
Rubrene with NPB, and this exciplex becomes the primary
recombination center at a critical Rubrene doping concentration. We
obtained its emission was green-white light and the green emission
is exciplex emission of the binary-blend NPB:rubrene layer. It is
demonstrated at the PL spectra.
© EDP Sciences 2006