Variable-range-hopping-like transverse conductivity of the quasi one-dimensional conductor TaS$_{3}$

V.Ya. Pokrovskii; I.G. Gorlova; S.G. Zybtsev; S.V. Zaitsev-Zotov

doi:doi:10.1051/jp4:2005131045

Issue		J. Phys. IV France Volume 131, December 2005


Page(s)		185 - 187
DOI		https://doi.org/10.1051/jp4:2005131045
Published online		18 January 2006

International Workshop on Electronic Crystals
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 185-187
DOI: 10.1051/jp4:2005131045

Variable-range-hopping-like transverse conductivity of the quasi one-dimensional conductor TaS₃

V.Ya. Pokrovskii, I.G. Gorlova, S.G. Zybtsev and S.V. Zaitsev-Zotov

Institute of Radioengineering and Electronics RAS, 125009 Moscow, Russia

Abstract
We report temperature dependence of transverse conductivity and its hysteresis in TaS₃. The results argue that the conductivity mechanism is variable-range hopping (VRH).

Variable-range-hopping-like transverse conductivity of the quasi one-dimensional conductor TaS3

Variable-range-hopping-like transverse conductivity of the quasi one-dimensional conductor TaS₃