| Numéro |
J. Phys. IV France
Volume 131, December 2005
|
|
|---|---|---|
| Page(s) | 359 - 360 | |
| DOI | https://doi.org/10.1051/jp4:2005131093 | |
| Publié en ligne | 18 janvier 2006 | |
International Workshop on Electronic Crystals
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 359-360
DOI: 10.1051/jp4:2005131093
Institute of Radioengineering and Electronics of the RAS, Moscow 125009, Russia
© EDP Sciences 2005
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 359-360
DOI: 10.1051/jp4:2005131093
Impurity-induced metal-insulator transition in quasi-one-dimensional metals TaSe3 and NbSe3
A.V. Zavalko and S.V. Zaitsev-ZotovInstitute of Radioengineering and Electronics of the RAS, Moscow 125009, Russia
Abstract
A metal-insulator transition induced by impurity incorporation was
observed in TaSe3 and NbSe3 samples. It was found out that
the conduction of nanometer-scale thickness TaSe3 samples
exhibits behavior expected for one-dimensional electron systems.
Thick micrometer-scale NbSe3 samples with impurities introduced
by thermal diffusion show a behavior similar to the one observed earlier in nanoscale samples
© EDP Sciences 2005