IR and N-IR spectrometry characterizations of LGS crystal and family

M. Assoud; J.J. Boy; K. Yamni; A. Albizane

doi:doi:10.1051/jp4:2005126010

Issue		J. Phys. IV France Volume 126, June 2005


Page(s)		47 - 50
DOI		https://doi.org/10.1051/jp4:2005126010

J. Phys. IV France 126 (2005) 47-50
DOI: 10.1051/jp4:2005126010

IR and N-IR spectrometry characterizations of LGS crystal and family

M. Assoud¹, J.J. Boy¹, K. Yamni² and A. Albizane²

¹ FEMTO-ST, UMR CNRS 6174, Dept. LCEP, École Nationale Supérieure de Mécanique et des Microtechniques, 26 chemin de l'Épitaphe, 25000 Besançon, France
² Laboratoire des Matériaux Catalyse et Environnement, Faculté des Sciences et Techniques Mohammedia, BP. 146, 20650 Mohammedia, Maroc

Abstract
Middle and near infrared (MIR/NIR) spectrometry has been used to characterize series of samples of LGx family and GaPO₄. Since OH impurities influence the material properties, their spectroscopy is investigated in detail. The [190-3200 nm] region is measured in transmission. Furthermore, the study of spectra made at Nitrogen liquid temperature is used to follow the modification in the signature of some defects present in the lattice and induced by treatments as $\gamma$ irradiation or annealing. At least, we show that these "new" materials contain less OH-groups than quartz crystal.