Growth of $\alpha$-GaPO$_{{\bf 4}}$ and $\alpha$-GeO$_{{\bf 2}}$ single crystals by the flux method

M. Beaurain; P. Armand; P. Papet

doi:doi:10.1051/jp4:2005126005

Numéro		J. Phys. IV France Volume 126, June 2005


Page(s)		23 - 26
DOI		https://doi.org/10.1051/jp4:2005126005

J. Phys. IV France 126 (2005) 23-26
DOI: 10.1051/jp4:2005126005

Growth of $\alpha$ -GaPO $_{{\bf 4}}$ and $\alpha$ -GeO $_{{\bf 2}}$ single crystals by the flux method

M. Beaurain, P. Armand and P. Papet

LPMC, UMR 5617, UMII, CC003, Place E. Bataillon, 34095 Montpellier Cedex 5, France

Abstract
Colorless and transparent single crystals of the piezoelectric materials $\alpha$ -GaPO₄ and $\alpha$ -GeO₂ have been grown by the spontaneous nucleation method from Li₂Mo₃O₁₀ flux at high temperature. Lattice parameters of the hexagonal-phase crystals have been measured by a single crystal X-ray diffraction method. Results of the infrared measurement have indicated the possibility of growing almost hydroxyl-free $\alpha$ -GaPO₄ crystals by the flux method. Thermal analyses have pointed out the phase transformation $\alpha$ -quartz GaPO $_{4} \leftrightarrow \beta$ -cristobalite GaPO₄.

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Growth of -GaPO and -GeO single crystals by the flux method

Growth of $\alpha$ -GaPO $_{{\bf 4}}$ and $\alpha$ -GeO $_{{\bf 2}}$ single crystals by the flux method