J. Phys. IV France
Volume 125, June 2005
|Page(s)||493 - 498|
J. Phys. IV France 125 (2005) 493-498
Nano and microscale thermal transport experimental measurementsD. Fournier, C. Filloy, S. Holé, J.P. Roger and G. Tessier
CNRS, UPR A0005/UPMC/ESPCI, Laboratoire d'Optique, 10 rue Vauquelin, 75005 Paris, France
Modern Silicon microelectronic components are nowadays in the nanometer scale regime. The thermal transport can be modified by the close proximity of interfaces and the extremely small volume of heat dissipation. The thermal management being more and more difficult to achieve, strong efforts have been done both on theoretical and experimental points of view. In this paper we will discuss the advances in measurement methods such as: Raman and photoluminescence spectroscopies, modulated thermoreflectance set-ups and scanning thermal microscopy which enable new capabilities for nanometer and micrometer scale thermal metrology. The optical methods will be presented and discussed in details, specially their lateral resolution, and their sensitivity for thermal mapping and thermal properties determination. The paper will be illustrated with examples taken in the microelectronics and material science fields.
© EDP Sciences 2005