| Issue |
J. Phys. IV France
Volume 114, April 2004
|
|
|---|---|---|
| Page(s) | 157 - 158 | |
| DOI | https://doi.org/10.1051/jp4:2004114038 | |
J. Phys. IV France 114 (2004) 157
DOI: 10.1051/jp4:2004114038
Pressure-induced Fermi surface change
in quasi-one-dimensional conductor
-(ET)(TCNQ)
S. Yasuzuka1, 2, D. Graf3, E.S. Choi3, J.S. Brooks3, T. Terashima2, T. Konoike2, K. Enomoto2, M. Nishimura2, H.M. Yamamoto4, R. Kato4 and S. Uji2
1 Division of Physics, Hokkaido University, Sapporo 060-0810, Japan
2 National Institute for Materials Science, Tsukuba 305-0003, Japan
3 Florida State University/National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA
4 Condensed Molecular Materials Lab., RIKEN, JST-CREST, Saitama 351-0198, Japan
Abstract
We report results of the magnetoresistance measurements
of
-(ET)(TCNQ) under a pressure of 7 kbar. The resistance is found
to show a large peak at 37 K suggesting some phase transition. When the
field applied perpendicular to the conducting layers, a resistance hump
appears at 12 K. The Shubnikov-de Haas oscillation with a high frequency of
4183 T is observed below 1 K, whose cross sectional area corresponds to
about 30% of the first Brillouin zone. The effective mass is estimated
to be 4.5
m0. These results, which are quite different from the ambient
e data, show a drastic change of the electronic state under 7 kbar.
-(ET)(TCNQ), Fermi surface, magnetic field,
pressure, magnetoresistance.
© EDP Sciences 2004