| Issue |
J. Phys. IV France
Volume 12, Number 9, November 2002
|
|
|---|---|---|
| Page(s) | 129 - 130 | |
| DOI | https://doi.org/10.1051/jp4:20020378 | |
J. Phys. IV France 12 (2002) Pr9-129
DOI: 10.1051/jp4:20020378
Currents conversion in the submicron CDW-N-CDW structures
S.G. Zybtsev1 and V.N. Timofeev21 Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
2 A.A. Baikov Institute of Metallurgy, Russian Academy of Sciences, Moscow, Russia
Abstract
Using selective area irradiation by electrons with high energies the submicron CDW-N -CDW
heterostructures were obtained on NbSe, single crystals. In sliding CDW regime an excess voltage appears on this
narrow normal region that depends neither on a sample, nor on the length of the irradiated area l and represents
threshold phase slip (PS) voltage V
, induced on CW-N boundaries. The obtained V
, data for lower CDW strongly
differ (5-6 times higher) from the known results for NbSe, obtained in the conventional configuration. This suggests
that CDW-N boundaries created by irradiation represent the "ideal" face contacts introducing small perturbations. At
low temperature (T
<7 K) and at l
<0.5
m we observe narrow (
-0.5 mV width) dynamic conductance peak at zero
bias voltage. The peak amplitude grows with decreasing temperature and length of the irradiated area.
© EDP Sciences 2002