J. Phys. IV France 12 (2002) Pr9-129
Currents conversion in the submicron CDW-N-CDW structuresS.G. Zybtsev1 and V.N. Timofeev2
1 Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
2 A.A. Baikov Institute of Metallurgy, Russian Academy of Sciences, Moscow, Russia
Using selective area irradiation by electrons with high energies the submicron CDW-N -CDW heterostructures were obtained on NbSe, single crystals. In sliding CDW regime an excess voltage appears on this narrow normal region that depends neither on a sample, nor on the length of the irradiated area l and represents threshold phase slip (PS) voltage V , induced on CW-N boundaries. The obtained V , data for lower CDW strongly differ (5-6 times higher) from the known results for NbSe, obtained in the conventional configuration. This suggests that CDW-N boundaries created by irradiation represent the "ideal" face contacts introducing small perturbations. At low temperature (T <7 K) and at l <0.5 m we observe narrow ( -0.5 mV width) dynamic conductance peak at zero bias voltage. The peak amplitude grows with decreasing temperature and length of the irradiated area.
© EDP Sciences 2002