Issue
J. Phys. IV France
Volume 11, Number PR11, Décembre 2001
International Conference on Thin Film Deposition of Oxide Multilayers Hybrid Structures
Page(s) Pr11-59 - Pr11-64
DOI https://doi.org/10.1051/jp4:20011109
International Conference on Thin Film Deposition of Oxide Multilayers Hybrid Structures

J. Phys. IV France 11 (2001) Pr11-59-Pr11-64

DOI: 10.1051/jp4:20011109

Nonlinear dielectric response of c- and a-axis oriented epitaxial (Ba,Sr)TiO3 layers between metallic oxide electrodes

Yu.A. Boikov1, 2, Z.G. Ivanov1 and T. Claeson1

1  Physics and Engineering Physics, Chalmers University of Technology and Goteborg University, 41296 Goteborg, Sweden
2  Ioffe Physico-Technical Institute RAS, 194021 St. Petersburg, Russia


Abstract
Trilayer epitaxial heterostructures of SrRuO3/(700nm)BaxSr1-xTiO3/SrRuOx3 (x= 0.25 ; 0.8) have been grown by laser ablation on (001)LSATO. Both ferroelectric and oxide metallic layers in the trilayer heterostructure possess granular structure. The grains (100-200 nm) in the ferroelectric layer were well in-plane and out-of-plane oriented and separated by low angle grain boundaries. Orientation of the polar axis in the ferroelectric layer was dependent on the type of mechanical stresses (tensile or compressive). When in paraelectric state, BaxSrl-xTiO3 layers followed a Curie - Weiss behavior with Weiss temperature and Curie constant roughly matching those of a bulk single crystal. The dielectric constant of the c-axis oriented Ba0.25Sr0.75TiO, layers was tuned in the range 3700ε0 - 450ε0 if +/- 2.5V if a bias voltage between +2.5V and -2.5V was applied to the electrodes. The loss factor, tan δ for the ferroelectric layers peaked at temperatures below the phase transition point. The peak falls at lower temperature at lower frequency and is affected by a bias voltage.



© EDP Sciences 2001