Issue
J. Phys. IV France
Volume 11, Number PR2, Juillet 2001
X-Ray Lasers 2000
Page(s) Pr2-495 - Pr2-498
DOI https://doi.org/10.1051/jp4:2001295
7th International Conference on X-Ray Lasers

J. Phys. IV France 11 (2001) Pr2-495-Pr2-498

DOI: 10.1051/jp4:2001295

Luminescence of insulating crystals induced by an XUV laser

A.N. Belsky1, 2, I.A. Kamenskikh1, S. Sebban3, 4, P. Jaeglé3, G. Jamelot3, A. Carillon3, A. Klisnick3, Ph. Zeitoun3, F. Albert3, 5, D. Ros3, B. Rus6, P. Martin2 and C. Pedrini7

1  Department of Optics and Spectroscopy, Moscow State University, Moscow, Russia
2  Centre Lasers Intenses et Applications, Université de Bordeaux 1, Talence, France
3  Laboratoire de Spectroscopie Atomique et Ionique, Orsay, France
4  LOA, ENSTA, Palaiseau, France
5  Lund Institute of Technology, Department of Atomic Physics, Lund, Sweden.
6  Department of Gas Lasers, Institute of Physics, Prague, Czech Republic
7  Laboratoire de Physico-Chimie des Matériaux Luminescents, Villeurbanne, France


Abstract
Results of the study of CsI luminescence excited by 58.5 eV photons of the XUV laser of LULI are presented. The energy of the exciting photons was sufficient for the creation of core holes at the 4d-iodine level. Following a single laser pulse luminescence spectra in the range 200 - 900 nm were detected. Using foil filters the density of excitation was varied from l09 to 1013 photons/cm2. The luminescence spectra measured following the laser pulse were substantially different from those measured using synchrotron radiation of the same energy or with X-rays. The following effect observed is discussed : manifestation of a new band attributed to the creation of complex defects (550 nm).



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