| Issue |
J. Phys. IV France
Volume 09, Number PR10, December 1999
International Workshop on Electronic CrystalsECRYS-99 |
|
|---|---|---|
| Page(s) | Pr10-235 - Pr10-238 | |
| DOI | https://doi.org/10.1051/jp4:19991059 | |
International Workshop
on Electronic Crystals
ECRYS-99
J. Phys. IV France 09 (1999) Pr10-235-Pr10-238
DOI: 10.1051/jp4:19991059
1 Institute of Physics, Technical University of Budapest, Budafoki ut 9, 1111 Budapest, Hungary
2 Research Institute for Solid State Physics and Optics, P.O. Box 49, 1525 Budapest, Hungary
© EDP Sciences 1999
ECRYS-99
J. Phys. IV France 09 (1999) Pr10-235-Pr10-238
DOI: 10.1051/jp4:19991059
Power law field dependence of the 2D magnetoresistance in (TMTSF)2PF6
G. Kriza1, 2, G . Szeghy1, I. Kézsmárki1 and G. Mihály11 Institute of Physics, Technical University of Budapest, Budafoki ut 9, 1111 Budapest, Hungary
2 Research Institute for Solid State Physics and Optics, P.O. Box 49, 1525 Budapest, Hungary
Abstract
The magnetoresistance of the quasi-one-dimensional organic conductor (TMTSF)2PF6 is studied for currents flowing parallel to the best conducting a and second best conducting b directions in magnetic fields perpendicular to the a-b plane under a hydrostatic pressure of 0.8 GPa. As a function of the magnetic field, the magnetoresistance follows a power law ΔR/R = (B/B0)3/2 both in the a and b directions. The a-b plane conductivity anisotropy is field independent. The scaling field B0, characterizing the strength of the magnetoresistance, follows an exponential temperature dependence B0 α exp(T/T0) with a field-independent characteristic temperature T0 = 10 K.
© EDP Sciences 1999