| Issue |
J. Phys. IV France
Volume 09, Number PR10, December 1999
International Workshop on Electronic CrystalsECRYS-99 |
|
|---|---|---|
| Page(s) | Pr10-17 - Pr10-21 | |
| DOI | https://doi.org/10.1051/jp4:19991004 | |
ECRYS-99
J. Phys. IV France 09 (1999) Pr10-17-Pr10-21
DOI: 10.1051/jp4:19991004
Dynamic scaling during CDW relaxation from the sliding state
J.D. Brock1, K.L. Ringland1, A.C. Finnefrock1, Y. Li1, S.G. Lemay2 and R.E. Thorne21 School of Applied and Engineering Physics, Cornell University, Ithaca, NY, U.S.A.
2 Department of Physics, Cornell University, Ithaca, NY, U.S.A.
Abstract
Using time-resolved high-resolution x-ray scattering techniques, we have measured
the evolution of the structure of the Q1 charge-density wave in NbSe3 as it relaxes
after an applied electric field is turned off. Measurements were made at temperatures
between 70 and 120 K and at applied field strengths up to 40x the threshold for sliding.
These time-dependent structural data are accurately described by dynamic scaling theory.
For threshold field strengths less than the threshold to sliding, the value of the dynamic
scaling exponent µ is consistent with the value predicted by assuming that the CDW is
an elastic medium. However, for field strengths greater than threshold, µ is significantly
smaller, indicating that phase-slip (amplitude fluctuations) is (are) necessary for a correct
physical description.
© EDP Sciences 1999