| Issue |
J. Phys. IV France
Volume 09, Number PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
|
|
|---|---|---|
| Page(s) | Pr8-763 - Pr8-768 | |
| DOI | https://doi.org/10.1051/jp4:1999896 | |
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
J. Phys. IV France 09 (1999) Pr8-763-Pr8-768
DOI: 10.1051/jp4:1999896
Laboratory for Inorganic Chemistry, Delft University of Technology, Julianalaan 136, 2628 BL Delft, The Netherlands
© EDP Sciences 1999
J. Phys. IV France 09 (1999) Pr8-763-Pr8-768
DOI: 10.1051/jp4:1999896
In situ mass spetrometry during laser-induced chemical vapor deposition of silicon carbonitride
G. Korevaar, W. Besling, A. Goossens and J. SchoonmanLaboratory for Inorganic Chemistry, Delft University of Technology, Julianalaan 136, 2628 BL Delft, The Netherlands
Abstract
Mass spectrometry provides a means to study the kinetics of the decomposition of hexamethyldisilazane (HMDS) in detail. Towards this end, in situ mass spectrometry during Laser-Induced Chemical Vapor Deposition (LCVD) of silicon carbonitride is investigated. The reactant gases, HMDS, and ammonia, are heated by a continuous wave CO2-laser in a parallel configuration with the substrate. In this way, silicon carbonitride deposits are formed at low substrate temperatures (300 °C). Insight in the formation of reaction intermediairs during LCVD is obtained. The HMDS molecule splits at the Si-N bonding due to laser radiation.
© EDP Sciences 1999