| Issue |
J. Phys. IV France
Volume 09, Number PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
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|
|---|---|---|
| Page(s) | Pr8-589 - Pr8-595 | |
| DOI | https://doi.org/10.1051/jp4:1999874 | |
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
J. Phys. IV France 09 (1999) Pr8-589-Pr8-595
DOI: 10.1051/jp4:1999874
1 Anorganische Chemie II, Ruhr Universität Bochum, 44780 Bochum, Germany
2 Experimentalle Physik III, Ruhr Universität Bochum, 44780 Bochum, Germany
3 Physikalisch-Chemisches Institut, Ruprecht-Karl-Universität Heidelberg, 69120 Heidelberg, Germany
© EDP Sciences 1999
J. Phys. IV France 09 (1999) Pr8-589-Pr8-595
DOI: 10.1051/jp4:1999874
OMVPE of GaN using (N3)2Ga[(CH2)3N(CH3)2] (BAZIGA) in a cold wall reactor
A. Devi1, W. Rogge1, R.A. Fischer1, F. Stowasser1, H. Sussek1, H.W. Becker2, J. Schäfer3 and J. Wolfrum31 Anorganische Chemie II, Ruhr Universität Bochum, 44780 Bochum, Germany
2 Experimentalle Physik III, Ruhr Universität Bochum, 44780 Bochum, Germany
3 Physikalisch-Chemisches Institut, Ruprecht-Karl-Universität Heidelberg, 69120 Heidelberg, Germany
Abstract
Transparent, smooth, epitaxial and stoichiometric films of GaN were grown on Al2O3(0001) substrates at temperatures as low as 1070K with a growth rate of 2µm/hr using the title compound without any additional source of nitrogen (ammonia). The concentrations of the fragments HGaNx and GaNx (x = 1 - 6) in the boundary layer as a function of temperature correlate with the growth rate (molecular beam sampling via pin hole, MS and REMPI-TOF spectroscopy) of the GaN films deposited. This indicates that tailored single source precursors offer a serious potential to grow films of group-13 nitrides significantly below 1300K.
© EDP Sciences 1999