| Issue |
J. Phys. IV France
Volume 09, Number PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
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|---|---|---|
| Page(s) | Pr8-273 - Pr8-280 | |
| DOI | https://doi.org/10.1051/jp4:1999834 | |
J. Phys. IV France 09 (1999) Pr8-273-Pr8-280
DOI: 10.1051/jp4:1999834
2D and 1D modeling of AMT barrel reactors for silicon deposition
M. Masi1, C. Cavallotti1, 2, 1, S. Carrà1, D. Crippa3 and G. Vaccari31 Dipartimento di Chimica Fisica Applicata, Politecnico di Milano, via Mancinelli 7, 20131 Milano, Italy
2 F. di Muzio
3 MEMC Electronic Materials SpA, viale Gherzi 31, 28100 Novara, Italy
Abstract
the epitaxial silicon deposition is industrially performed by cold wall barrel reactors because their large productivity. Unfortunately, such a high productivity is associated to film thickness control problems. System optimization can be performed satisfactorily only through models where the geometry and the reactor flow dynamics were accounted in detail. Here, the atmospheric Si deposition by SiHCl3/H2 mixtures in a AMT 7700 barrel reactor was simulated through of a detailed 2D model solved by the commercial finite element code FIDAP. To obtain a flexible and fast running model to be used on-line, a 1D simplified model was also derived. Different geometrical configurations and deposition conditions were examined, comparing all the simulation with experimental data.
© EDP Sciences 1999