| Issue |
J. Phys. IV France
Volume 09, Number PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
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|---|---|---|
| Page(s) | Pr8-141 - Pr8-148 | |
| DOI | https://doi.org/10.1051/jp4:1999817 | |
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
J. Phys. IV France 09 (1999) Pr8-141-Pr8-148
DOI: 10.1051/jp4:1999817
1 Laboratoire de Génie Chimique, UMR 5503 du CNRS, ENSIGC, 18 chemin de la Loge, 31078 Toulouse cedex 4, France
2 Science des Procédés Céramiques et de Traitements de Surface, ENSIL, UMR 6638 du CNRS, 123 avenue A. Thomas, 87060 Limoges cedex, France
© EDP Sciences 1999
J. Phys. IV France 09 (1999) Pr8-141-Pr8-148
DOI: 10.1051/jp4:1999817
Study of the precursor injection in a remote microwave PECVD reactor
L. Foucher1, F. Naudin2, P. Duverneuil1, C. Tixier2 and J. Desmaison21 Laboratoire de Génie Chimique, UMR 5503 du CNRS, ENSIGC, 18 chemin de la Loge, 31078 Toulouse cedex 4, France
2 Science des Procédés Céramiques et de Traitements de Surface, ENSIL, UMR 6638 du CNRS, 123 avenue A. Thomas, 87060 Limoges cedex, France
Abstract
Silicon oxide is deposited by Remote Microwave Plasma Enhanced Chemical Vapor Deposition (RMPECVD) using an oxygen plasma and a mixture of 5% silane in argon injected in the afterglow. Silica is used for applications such as protective and insulating coatings over temperature sensitive substrates (microelectronics, sensors...). As the role of injection is quite important to obtain uniform thickness, a simulation with different geometry of injector is needed. The mathematical code, ESTET, has been used to get a better understanding of the thermal and hydrodynamic phenomena and to optimize the injector. The results and the correlation with the film uniformity are discussed.
© EDP Sciences 1999