Asymmetric properties of Pb(Zr,Ti)O3 thin film capacitors with conducting oxides

C.H. Choi; J. Lee

doi:doi:10.1051/jp4:1998918

Issue		J. Phys. IV France Volume 08, Number PR9, December 1998 2^nd European Meeting on Integrated Ferroelectrics EMIF 2


Page(s)		Pr9-109 - Pr9-112
DOI		https://doi.org/10.1051/jp4:1998918

2^nd European Meeting on Integrated Ferroelectrics
EMIF 2

J. Phys. IV France 08 (1998) Pr9-109-Pr9-112
DOI: 10.1051/jp4:1998918

Asymmetric properties of Pb(Zr,Ti)O₃ thin film capacitors with conducting oxides

C.H. Choi and J. Lee

Department of Materials Engineering, Sung Kyun Kwan University, Suwon 440-746, Korea

Abstract
Asymmetric properties of Pb(Zr,Ti)O₃ (PZT) thin films has been studied in (La,Sr)CoO₃/Pb(Zr,Ti)O₃/(La,Sr)CoO₃(LSCO) heterostructures in which the conducting oxide (La,Sr)CoO₃ (LSCO) and/or LaCoO₃ (LCO) have been used as an electrode. LCO/PZT/LSCO showed a largely asymmetric P-V hysteresis loop and large relaxation of the remanent polarization at the negatively poled state, eventually leading to an imprint failure. Corresponding to P-V hysteresis loop, leakage current behavior and capacitance - voltage characteristic of the LCO/PZT/LSCO were asymmetric. Post annealing treatment at reducing atmosphere further increased the relaxation of the unstable remanenet polarization.