| Issue |
J. Phys. IV France
Volume 08, Number PR9, December 1998
2nd European Meeting on Integrated FerroelectricsEMIF 2 |
|
|---|---|---|
| Page(s) | Pr9-83 - Pr9-86 | |
| DOI | https://doi.org/10.1051/jp4:1998914 | |
2nd European Meeting on Integrated Ferroelectrics
EMIF 2
J. Phys. IV France 08 (1998) Pr9-83-Pr9-86
DOI: 10.1051/jp4:1998914
1 Chemistry Department, Moscow State Lomonosov University, 119899 Moscow, Russia
2 Moscow State Institute of Radioengineering, Electronics, and Automation, Technical University, Vernadsky Prosp. 78, 117454 Moscow, Russia
3 Université de Provence, Laboratoire de Chimie de Coordination, Saint Jérôme, 13397 Marseille cedex 20, France
© EDP Sciences 1998
EMIF 2
J. Phys. IV France 08 (1998) Pr9-83-Pr9-86
DOI: 10.1051/jp4:1998914
Sol-gel processing of bismuth strontium tantalate thin films
E.P. Turevskaya1, K.A. Vorotilov2, V.B. Bergo1, S.V. Sokolov1, A.S. Sigov2 and D. Benlian31 Chemistry Department, Moscow State Lomonosov University, 119899 Moscow, Russia
2 Moscow State Institute of Radioengineering, Electronics, and Automation, Technical University, Vernadsky Prosp. 78, 117454 Moscow, Russia
3 Université de Provence, Laboratoire de Chimie de Coordination, Saint Jérôme, 13397 Marseille cedex 20, France
Abstract
The synthesis of bismuth strontium tantalate thin films by alkoxide route and their ferroelectric properties were studied. It was found that single phase ferroelectric films with the thickness of 0.4-0.5 µm could be formed by four repeated cycles of deposition of 2-ethylhexanoic acid solution of metal alkoxides on Si-SiO2-Ti-Pt wafers followed by annealing in the temperature range of 700-750°C for 30 min after each deposition. The films showed remanent polarization ranging from 3.5 to 4.0 µC/cm2 and coercieve voltage 1.5-2.0 V.
© EDP Sciences 1998