Preparation and properties of Ba1-xSrxTiO3 thin films deposited by the sol-gel technique

E. Dien; R. Verveur; M. Lejeune; A. Smith

doi:doi:10.1051/jp4:1998912

Issue		J. Phys. IV France Volume 08, Number PR9, December 1998 2^nd European Meeting on Integrated Ferroelectrics EMIF 2


Page(s)		Pr9-73 - Pr9-77
DOI		https://doi.org/10.1051/jp4:1998912

2^nd European Meeting on Integrated Ferroelectrics
EMIF 2

J. Phys. IV France 08 (1998) Pr9-73-Pr9-77
DOI: 10.1051/jp4:1998912

Preparation and properties of Ba_1-xSr_xTiO₃ thin films deposited by the sol-gel technique

E. Dien, R. Verveur, M. Lejeune and A. Smith

Laboratoire Matériaux Céramiques et Traitements de Surface (LMCTS - ESA 6015), École Nationale Supérieure de Céramique Industrielle (ENSCI), 47 à 73 avenue Albert Thomas, 87065 Limoges cedex, France

Abstract
The present work concerns the preparation and the physical properties of Ba_0.67Sr_0.33TiO₃ composition under thin film form. The layers have been deposited by spin-coating on top of Pt/Ti/SiO₂/Si substrates using barium and strontium acetates, dissolved in acetic acid, mixed up with titanium tetra-isopropoxide in 2-propanol. The amounts of each constituent have been carefully adjusted to obtain stable and homogeneous sols. Different thermal treatments of the deposited layers have been carried out. They consist of a pre-firing cycle (330°C or 550°C) followed by a rapid thermal annealing (RTA) at 800°C. The final films are characterized by a thickness in the range 180-600 nm and an average crystallite size of 40 nm. This paper also presents the electrical characteristics of the deposits. So far, the best dielectric constant, ε_r, is of the order of 350. Variations of ε' and ε" with respect to temperature (from -20°C to 120°C) have been investigated.