Formation of a sol-gel derived Pb(Zr,Ti)O3 thin-film capacitor with polycrystalline SrRuO3 electrodes

K. Aoki; Y. Fukuda

doi:doi:10.1051/jp4:1998910

Issue		J. Phys. IV France Volume 08, Number PR9, December 1998 2^nd European Meeting on Integrated Ferroelectrics EMIF 2


Page(s)		Pr9-65 - Pr9-68
DOI		https://doi.org/10.1051/jp4:1998910

2^nd European Meeting on Integrated Ferroelectrics
EMIF 2

J. Phys. IV France 08 (1998) Pr9-65-Pr9-68
DOI: 10.1051/jp4:1998910

Formation of a sol-gel derived Pb(Zr,Ti)O₃ thin-film capacitor with polycrystalline SrRuO₃ electrodes

K. Aoki and Y. Fukuda

Texas Instruments Tsukuba Research & Development Center Limited, 17 Miyukigaoka, Tsukuba-Shi, Ibaraki 305, Japan

Abstract
The characteristics of a sol-gel derived Pb(Zr,TiO)₃ capacitor with polycrystalline SrRuO₃ electrodes deposited by reactive sputtering were evaluated. A single perovskite phase Pb(Zr,Ti)O₃ film with columnar grain structure was formed on SrRuO₃ substrates since nucleation of Pb(Zr,Ti)O₃ took place at the interface with SrRuO₃. A Pb(Zr,Ti)O₃ capacitor with top and bottom SrRuO₃ electrodes exhibited good polarization reversibility. Remanent polarization at 5.0 V was 20.8 µ c/cm². No degradation of remanent polarization was observed up to switching cycles of 1x10₁₀. Polycrystalline SrRuO₃ thin film is expected to be a good candidate for the electrode material of Pb(Zr,Ti)O₃ capacitors.