Issue |
J. Phys. IV France
Volume 08, Number PR9, December 1998
2nd European Meeting on Integrated FerroelectricsEMIF 2 |
|
---|---|---|
Page(s) | Pr9-65 - Pr9-68 | |
DOI | https://doi.org/10.1051/jp4:1998910 |
2nd European Meeting on Integrated Ferroelectrics
EMIF 2
J. Phys. IV France 08 (1998) Pr9-65-Pr9-68
DOI: 10.1051/jp4:1998910
Texas Instruments Tsukuba Research & Development Center Limited, 17 Miyukigaoka, Tsukuba-Shi, Ibaraki 305, Japan
© EDP Sciences 1998
EMIF 2
J. Phys. IV France 08 (1998) Pr9-65-Pr9-68
DOI: 10.1051/jp4:1998910
Formation of a sol-gel derived Pb(Zr,Ti)O3 thin-film capacitor with polycrystalline SrRuO3 electrodes
K. Aoki and Y. FukudaTexas Instruments Tsukuba Research & Development Center Limited, 17 Miyukigaoka, Tsukuba-Shi, Ibaraki 305, Japan
Abstract
The characteristics of a sol-gel derived Pb(Zr,TiO)3 capacitor with polycrystalline SrRuO3 electrodes deposited by reactive sputtering were evaluated. A single perovskite phase Pb(Zr,Ti)O3 film with columnar grain structure was formed on SrRuO3 substrates since nucleation of Pb(Zr,Ti)O3 took place at the interface with SrRuO3. A Pb(Zr,Ti)O3 capacitor with top and bottom SrRuO3 electrodes exhibited good polarization reversibility. Remanent polarization at 5.0 V was 20.8 µ c/cm2. No degradation of remanent polarization was observed up to switching cycles of 1x1010. Polycrystalline SrRuO3 thin film is expected to be a good candidate for the electrode material of Pb(Zr,Ti)O3 capacitors.
© EDP Sciences 1998