| Issue |
J. Phys. IV France
Volume 08, Number PR9, December 1998
2nd European Meeting on Integrated FerroelectricsEMIF 2 |
|
|---|---|---|
| Page(s) | Pr9-3 - Pr9-15 | |
| DOI | https://doi.org/10.1051/jp4:1998901 | |
2nd European Meeting on Integrated Ferroelectrics
EMIF 2
J. Phys. IV France 08 (1998) Pr9-3-Pr9-15
DOI: 10.1051/jp4:1998901
Schools of Physics and Chemistry, University of New South Wales, Sydney 2052, Australia
© EDP Sciences 1998
EMIF 2
J. Phys. IV France 08 (1998) Pr9-3-Pr9-15
DOI: 10.1051/jp4:1998901
Effects of constrained geometries and fast access times in real ferroelectric memory devices
J.F. Scott and A.J. HartmannSchools of Physics and Chemistry, University of New South Wales, Sydney 2052, Australia
Abstract
A status report is given on the physical limitations imposed by both thickness and cross-sectional area in ferroelectric thin films in ferroelectric memories.
© EDP Sciences 1998