| Issue |
J. Phys. IV France
Volume 08, Number PR3, June 1998
Proceedings of the 3rd European Workshop on Low Temperature ElectronicsWOLTE 3 |
|
|---|---|---|
| Page(s) | Pr3-53 - Pr3-56 | |
| DOI | https://doi.org/10.1051/jp4:1998313 | |
Proceedings of the 3rd European Workshop on Low Temperature Electronics
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-53-Pr3-56
DOI: 10.1051/jp4:1998313
1 Department of Fab 2BE1, Taiwan Semiconductor Manufacturing Company, Hsinchu 300, Taiwan
2 Department of Electrical Engineering, Da-Yeh University, Chang-Hwa 515, Taiwan
© EDP Sciences 1998
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-53-Pr3-56
DOI: 10.1051/jp4:1998313
The temperature influence of substrate current in submicron N-channel MOSFETs
S.-H. Chen1, S.-L. Chen2, S.-T. Chung2 and C.-C. Chen21 Department of Fab 2BE1, Taiwan Semiconductor Manufacturing Company, Hsinchu 300, Taiwan
2 Department of Electrical Engineering, Da-Yeh University, Chang-Hwa 515, Taiwan
Abstract
In our study, we characterize the temperature and stress dependence of the substrate current, and will present a complete substrate-current model which is suitable for both room temperature and liquid-nitrogen temperature operations. A number of DDD samples are presented to justify our new substrate current model. The theoretical results are found in good agreement with the measurement data and the average error is less than 7%. These consistences between the measurement data and the simulated data will be enhanced the physical understanding of substrate current in MOSFETs.
© EDP Sciences 1998