Issue
J. Phys. IV France
Volume 7, Number C2, Avril 1997
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
Page(s) C2-1203 - C2-1204
DOI https://doi.org/10.1051/jp4:19972194
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure

J. Phys. IV France 7 (1997) C2-1203-C2-1204

DOI: 10.1051/jp4:19972194

Ni K-Edge XANES Studies of Hole Doped Nd2-xSrxNiO4 and Reduced Nd2-xSrxNiOy

M. Jiménez-Ruiz1, C. Prieto1, A. de Andrés1, J.L. Martínez1, J.M. Alonso1, M. Vallet-Regí2 and J.M. González-Calbet3

1  Instituto de Ciencia de Materiales de Madrid (C.S.I.C.) Cantoblanco, Madrid 28049, Spain
2  Dep. Química Inorgánica y Bioinorgánica, Fac. Farmacia, Universidad Complutense, Madrid 28040, Spain
3  Dep. Química Inorgánica, Fac. Ciencias Químicas, Universidad Complutense, Madrid 28040, Spain


Abstract
In the present work we have analyzed the Ni K-edge XANES of two series of families in order to determine their Ni oxidation state : i) the hole doped Nd2-xSrxNiO4 (0.2+x+0.8) ; and ii) the reduced Nd2-xSrxNiOy (0.2+x+0.5 and 3.5+y+3.79). The Ni K-edge XANES shows an increase of Ni(III) content with the Sr concentration for the hole doped samples. Additionally, the reduced family shows the disappearance of Ni(III), a decrease of Ni(II) with respect to the non-reduced one and an increase of Ni(I).



© EDP Sciences 1997