The Dynamic Characteristics of the Field Emission from the Structures with Quantum Wells

V.G. Litovchenko; Y.V. Kryuchenko

doi:doi:10.1051/jp4:1996523

Issue		J. Phys. IV France Volume 06, Number C5, Septembre 1996 International Field Emission Society IFES'96 Proceedings of the 43^rd International Field Emission Symposium


Page(s)		C5-141 - C5-146
DOI		https://doi.org/10.1051/jp4:1996523

International Field Emission Society
IFES'96
Proceedings of the 43^rd International Field Emission Symposium

J. Phys. IV France 06 (1996) C5-141-C5-146
DOI: 10.1051/jp4:1996523

The Dynamic Characteristics of the Field Emission from the Structures with Quantum Wells

V.G. Litovchenko and Y.V. Kryuchenko

Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Prospekt Nauki, Kiev-252028, Ukraine

Abstract
The dynamic characteristics of field electron emission from the layered structures with quantum wells have been qualitatively analysed. The main factor leading to appearance of the high frequency current oscillation is the negative differential resistance, observed under rather high electrical field. Layered structures with superthin barriers (like Si - SiO₂ - δSi - SiO₂) seems to be likely to show this effect. The very narrow resonance peak in the FE-current from QW system at the definite external fields have been demonstrated.