| Issue |
J. Phys. IV France
Volume 04, Number C7, Juillet 1994
8th International Topical Meeting on Photoacoustic and Photothermal Phenomena8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique |
|
|---|---|---|
| Page(s) | C7-137 - C7-140 | |
| DOI | https://doi.org/10.1051/jp4:1994733 | |
8th International Topical Meeting on Photoacoustic and Photothermal Phenomena
8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-137-C7-140
DOI: 10.1051/jp4:1994733
1 Photothermal and Optoelectronic Diagnostics Laboratory, Department of Mechanical Engineering, University of Toronto, Toronto, Canada, M5S 1A4
2 On leave from Jenoptik GmbH, Jena, Germany
© EDP Sciences 1994
8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-137-C7-140
DOI: 10.1051/jp4:1994733
Highly-resolved separation of carrier and thermal wave contributions to photothermal signals from Cr-doped silicon using rate-window infrared radiometry
A. Mandelis1 and R. Bleiss21 Photothermal and Optoelectronic Diagnostics Laboratory, Department of Mechanical Engineering, University of Toronto, Toronto, Canada, M5S 1A4
2 On leave from Jenoptik GmbH, Jena, Germany
Abstract
We have shown that the new photothermal technique of lock-in rate-window infrared radiometry (RW-PTR) is capable of completely separating out photo-excited free-carrier-wave and thermal-wave contributions to the photothermal signal from an n-type, Cr-doped Si wafer with a simple experimental procedure, and with superior temporal resolution in the determination of the electronic lifetime and thermal transport time constant.
© EDP Sciences 1994