| Issue |
J. Phys. IV France
Volume 04, Number C7, Juillet 1994
8th International Topical Meeting on Photoacoustic and Photothermal Phenomena8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique |
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|---|---|---|
| Page(s) | C7-133 - C7-136 | |
| DOI | https://doi.org/10.1051/jp4:1994732 | |
8th International Topical Meeting on Photoacoustic and Photothermal Phenomena
8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-133-C7-136
DOI: 10.1051/jp4:1994732
1 Fakultät für Physik und Astronomie, AG Festkörperspektroskopie, Ruhr-Universität Bochum, 44780 Bochum, Germany
2 Physikalisch-Astronomisch-Technikwissenschaftliche Fakultät, Friedrich-Schiller-Universität, 07743 Jena, Germany
© EDP Sciences 1994
8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-133-C7-136
DOI: 10.1051/jp4:1994732
Spatially resolved photomodulated microwave absorption and thermal wave images of boron doped silicon
O. von Geisau1, R. Meckenstock1, F. Schreiber1, J. Pelzl1, U. Seidel2 and H.G. Walther21 Fakultät für Physik und Astronomie, AG Festkörperspektroskopie, Ruhr-Universität Bochum, 44780 Bochum, Germany
2 Physikalisch-Astronomisch-Technikwissenschaftliche Fakultät, Friedrich-Schiller-Universität, 07743 Jena, Germany
Abstract
A novel imaging technique for semiconductor samples, the photomodulated microwave absorption (PMA), is presented. The sample is placed in a microwave cavity and illuminated with a modulated focussed laser beam. The excited photo carriers disturb the distribution of the high-frequency electric field in the cavity and therefore change its quality factor. This change is accessible to the experiment. First results on a silicon sample with well defined boron doped areas (1015 cm-2) are resented and compared to Mirage experiments.
© EDP Sciences 1994