| Issue |
J. Phys. IV France
Volume 04, Number C7, Juillet 1994
8th International Topical Meeting on Photoacoustic and Photothermal Phenomena8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique |
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|---|---|---|
| Page(s) | C7-27 - C7-30 | |
| DOI | https://doi.org/10.1051/jp4:1994707 | |
8th International Topical Meeting on Photoacoustic and Photothermal Phenomena
8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-27-C7-30
DOI: 10.1051/jp4:1994707
1 Fraunhofer-Institut für Integrierte Schaltungen, Artilleriestrasse 12, 91052 Erlangen, Germany
2 Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Helmholtzweg 3, 07743 Jena, Germany
© EDP Sciences 1994
8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-27-C7-30
DOI: 10.1051/jp4:1994707
Applications of single-beam photothermal analysis
R. Schork1, S. Krügel2, C. Schneider1, L. Pfitzner1 and H. Ryssel11 Fraunhofer-Institut für Integrierte Schaltungen, Artilleriestrasse 12, 91052 Erlangen, Germany
2 Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Helmholtzweg 3, 07743 Jena, Germany
Abstract
Thermal wave techniques have gained increasing attention in semiconductor process control because they are nondestructive and noncontacting. Recently, in-line and in situ implementations have been investigated. This paper will demonstrate that thermal wave analysis is capable of measuring two major parameters, metal layer thickness and temperature.
© EDP Sciences 1994