| Issue |
J. Phys. IV France
Volume 03, Number C7, Novembre 1993
The 3rd European Conference on Advanced Materials and ProcessesTroisiéme Conférence Européenne sur les Matériaux et les Procédés Avancés |
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|---|---|---|
| Page(s) | C7-1449 - C7-1453 | |
| DOI | https://doi.org/10.1051/jp4:19937225 | |
The 3rd European Conference on Advanced Materials and Processes
Troisiéme Conférence Européenne sur les Matériaux et les Procédés Avancés
J. Phys. IV France 03 (1993) C7-1449-C7-1453
DOI: 10.1051/jp4:19937225
Centre d'Electronique de Montpellier Laboratoire associé au CNRS URA 391, Université Montpellier II, Sciences et Technique du Languedoc, Place Eugène Bataillon, 34095 Montpellier cedex 5, France
© EDP Sciences 1993
Troisiéme Conférence Européenne sur les Matériaux et les Procédés Avancés
J. Phys. IV France 03 (1993) C7-1449-C7-1453
DOI: 10.1051/jp4:19937225
Physical properties of MgO partially stabilized ZrO2 films deposited by coevaporation
F. TCHELIEBOU, A. BOYER and E. CHARLESCentre d'Electronique de Montpellier Laboratoire associé au CNRS URA 391, Université Montpellier II, Sciences et Technique du Languedoc, Place Eugène Bataillon, 34095 Montpellier cedex 5, France
Abstract
ZrO2 films partially stabilized with MgO in the concentration range 7.6 - 26.1mol% of MgO have been investigated. The deposition were achieved by coevaporation using a double hearths electron-gun. X-rays diffraction patterns displayed polycrystalline structure. Cubic phase appears from 11.1 mol % MgO. The dielectric constant and the ac conductivity increase to maxima for 14.5, mol % MgO content whatever is the temperature in the range 27°C-700°C. It was also found that the film refractive index exhibits the same behaviour.
© EDP Sciences 1993