Issue |
J. Phys. IV France
Volume 03, Number C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
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Page(s) | C3-189 - C3-193 | |
DOI | https://doi.org/10.1051/jp4:1993324 |
J. Phys. IV France 03 (1993) C3-189-C3-193
DOI: 10.1051/jp4:1993324
Ellipsometric analysis for CVD thick films on weakly absorbing substrates
M.N. CHURAEVAInstitute of Physical Chemistry, Academy of Sciences, Leninsky pr. 31, 117915 Moscow, Russia
Abstract
Ellipsometry is a traditional technique for the thickness and the optical constants of CVD films determination, and if in situ film control is impossible, the best way is to use spectroellipsometry. The novel method for quick estimation of the film parameters in the case of weakly absorbing thick film (80 - 600 nm) on nonabsorbing substrate, using spectroellipsometry is presented. The experimental results for electronbeam assisted CVD ZrO2 films on quartz, PECVD diamond and a-B/C : H films on Si (100) are reported and the influence of substrate absorption and intermediate layers presence is discussed. Both the thickness and the wave dependence of the film optical constants were calculated from the azimuth of polarization spectra in the range of 360-660nm.
© EDP Sciences 1993