| Issue |
J. Phys. IV France
Volume 03, Number C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
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|---|---|---|
| Page(s) | C3-171 - C3-176 | |
| DOI | https://doi.org/10.1051/jp4:1993321 | |
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
J. Phys. IV France 03 (1993) C3-171-C3-176
DOI: 10.1051/jp4:1993321
Institut de Science et de Génie des Matériaux et Procédés, CNRS, BP. 5, Odeillo, 66125 Font Romeu cedex, France
© EDP Sciences 1993
J. Phys. IV France 03 (1993) C3-171-C3-176
DOI: 10.1051/jp4:1993321
AES characterization and depth profiles measurements of AIN thin films on SiO2 substrates
B. ASPAR, R. BERJOAN, B. ARMAS and D. PERARNAUInstitut de Science et de Génie des Matériaux et Procédés, CNRS, BP. 5, Odeillo, 66125 Font Romeu cedex, France
Abstract
Depth profiles measurements of the elements A1, Si, N and O were determined using Auger electron spectrometry during ion etching of an A1N C.V.D. thin film deposited on an amorphous silica substrate. The Auger spectra collected at various time intervals showed the presence of Al-O, Si-O and Si-N chemical bondings in the interphase A1N/SiO2. This result indicates that the growth of an A1N thin film on a silica substrate begins by a strong oxidation of aluminium which involves a partial nitridation of silicon.
© EDP Sciences 1993