Charge-density wave phase-slip in niobium triselenide : dislocations and the growth of an, electronic crystal

Abstract
The analogy is explored between phase-slip in charge-density wave conductors, which brings about the growth and decay of an electronic crystal, and the processes of growth and plastic flow which occur in conventional crystals. The experimental data on NbSe₃ are re-examined, and new measurements of the voltage V_ps needed to produce phase-slip at a given rate presented. It is suggested that V_ps is determined mainly by the difficulty of inducing dislocation loops in the charge-density wave to climb to the crystal surface, rather than by their difficulty of nucleation.