| Numéro |
J. Phys. IV France
Volume 09, Numéro PR10, December 1999
International Workshop on Electronic CrystalsECRYS-99 |
|
|---|---|---|
| Page(s) | Pr10-97 - Pr10-100 | |
| DOI | https://doi.org/10.1051/jp4:19991025 | |
International Workshop
on Electronic Crystals
ECRYS-99
J. Phys. IV France 09 (1999) Pr10-97-Pr10-100
DOI: 10.1051/jp4:19991025
H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, U.K.
© EDP Sciences 1999
ECRYS-99
J. Phys. IV France 09 (1999) Pr10-97-Pr10-100
DOI: 10.1051/jp4:19991025
Phase slip and the motion of charge-density wave dislocations in NbSe3
J.C. GillH.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, U.K.
Abstract
The common view that a moving CDW behaves elastically except near
current terminals, where phase slip occurs at a rate determined by the nucleation of
dislocation loops, is shown to be in important respects inconsistent with experiment.
An alternative model is developed, which allows the rate of phase slip to be limited by
the climb velocity of dislocations created in the course of depinning. The model
appears to account for the phase slip and strain distribution in NbSe3 specimens of
various lengths, and for other phenomena not readily explicable in conventional terms.
© EDP Sciences 1999