Numéro |
J. Phys. IV France
Volume 12, Numéro 4, June 2002
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Page(s) | 99 - 105 | |
DOI | https://doi.org/10.1051/jp4:20020083 |
J. Phys. IV France 12 (2002) Pr4-99
DOI: 10.1051/jp4:20020083
Vapor-phase synthesis and characterization of ZnSe nanoparticles
D. Sarigiannis1, R.P. Pawlowski1, J.D. Peck1, T.J. Mountziaris1, G. Kioseoglou2 and A. Petrou21 Laboratoire de Catalyse, Chimie Fine et Polymères, École Nationale Supérieure de Chimie de Toulouse, 118 route de Narbonne, 31077 Toulouse cedex, France
2 Centre Interuniversitaire de Recherche et d'Ingénierie des Matériaux, UMR CNRSIINPT/UPS, École Nationale Supérieure de Chimie de Toulouse, 118 route de Narbonne, 31077 Toulouse cedex, France
Abstract
Compound semiconductor nanoparticles are an exciting class of materials whose unique
optical and electronic properties can be exploited in a variety of applications, including
optoelectronics, photovoltaics, and biophotonics. The most common route for synthesizing such
nanoparticles has been via liquid-phase chemistry in reverse micelles. This paper discusses a
flexible vapor-phase technique for synthesis of crystalline compound semiconductor nanoparticles
using gas-phase condensation reactions near the stagnation point of a counterflow jet reactor. ZnSe
nanoparticles were formed by reacting vapors of dimethylzinc: triethylamine adduct and hydrogen
selenide at 120 Torr and room temperature (28 °C). No attempt was made to passivate the surface of
the particles, which were collected as random aggregates on silicon wafers or TEM grids placed
downstream of the reaction zone. Particle characterization using TEM, electron diffraction, Raman
and EDAX revealed that the aggregates consisted of polycrystalline ZnSe nanoparticles, almost
monodisperse in size (with diameters of ~40 nm). The polycrystalline nanoparticles appear to have
been formed by coagulation of smaller single-crystalline nanoparticles with characteristic size of
3-5 run.
© EDP Sciences 2002