Thermoreflectance measurements on test microelectronic devices at several probe wavelengths: Comparison between CCD and focused laser techniques

L.R. de Freitas; A.M. Mansanares; E.C. da Silva; M.C.B. Pimentel; S. Finco; G. Tessier; D. Fournier

doi:doi:10.1051/jp4:2005125028

Numéro		J. Phys. IV France Volume 125, June 2005


Page(s)		121 - 124
DOI		https://doi.org/10.1051/jp4:2005125028

J. Phys. IV France 125 (2005) 121-124
DOI: 10.1051/jp4:2005125028

Thermoreflectance measurements on test microelectronic devices at several probe wavelengths: Comparison between CCD and focused laser techniques

L.R. de Freitas¹, A.M. Mansanares¹, E.C. da Silva¹, M.C.B. Pimentel², S. Finco², G. Tessier³ and D. Fournier³

¹ Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas, Unicamp, Cx. P. 6165, 13083-970, Campinas, São Paulo, Brazil
² Centro de Pesquisa Renato Archer, CenPRA, 13082-120, Campinas, São Paulo, Brazil
³ Laboratoire d'Instrumentation, UPMC, UPRA 0005 du CNRS, 10 rue Vauquelin, 75005 Paris, France

Abstract
In this paper we present thermoreflectance measurements on polycrystalline silicon conducting tracks for several wavelengths of the probe beam. Two distinct experimental setup were employed, namely, the CCD camera setup and the focused laser setup. It is shown that the thermoreflectance signal behavior is closely related to the derivative of the optical reflectance with respect to the wavelength.