| Numéro |
J. Phys. IV France
Volume 08, Numéro PR3, June 1998
Proceedings of the 3rd European Workshop on Low Temperature ElectronicsWOLTE 3 |
|
|---|---|---|
| Page(s) | Pr3-81 - Pr3-86 | |
| DOI | https://doi.org/10.1051/jp4:1998319 | |
Proceedings of the 3rd European Workshop on Low Temperature Electronics
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-81-Pr3-86
DOI: 10.1051/jp4:1998319
Invited Paper
F. Aniel1, N. Zerounian1, A. Gruhle2, C. Mähner3, G. Vernet1 and R. Adde1
1 IEF, URA 22 du CNRS, bâtiment 220, Université Paris Sud, 91405 Orsay cedex, France
2 Daimler-Benz Research, W. Runge Strasse 11, 89081 Ulm, Germany
3 TEMIC Semiconductor GmbH, 74025 Heilbronn, Germany
© EDP Sciences 1998
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-81-Pr3-86
DOI: 10.1051/jp4:1998319
Invited Paper
Temperature dependence of SiGe HBT static and dynamic characteristics
F. Aniel1, N. Zerounian1, A. Gruhle2, C. Mähner3, G. Vernet1 and R. Adde1 1 IEF, URA 22 du CNRS, bâtiment 220, Université Paris Sud, 91405 Orsay cedex, France
2 Daimler-Benz Research, W. Runge Strasse 11, 89081 Ulm, Germany
3 TEMIC Semiconductor GmbH, 74025 Heilbronn, Germany
Abstract
The SiGe HBT is a good candidate for MIC, MMIC and high speed logic circuits below 50GHz at ambient temperature and also at cryogenic temperature. A static and dynamic analysis of abrupt junction SiGe HBTs is presented in a wide range of temperatures, biases and frequencies up to 50GHz. The different transit times are investigated by analyzing the temperature dependence of the devices'static and HF properties between 50K and 300K.
© EDP Sciences 1998