| Numéro |
J. Phys. IV France
Volume 08, Numéro PR3, June 1998
Proceedings of the 3rd European Workshop on Low Temperature ElectronicsWOLTE 3 |
|
|---|---|---|
| Page(s) | Pr3-75 - Pr3-78 | |
| DOI | https://doi.org/10.1051/jp4:1998318 | |
Proceedings of the 3rd European Workshop on Low Temperature Electronics
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-75-Pr3-78
DOI: 10.1051/jp4:1998318
Institute of Semiconductor Physics, National Academy of Science of Ukraine, Prospekt Nauki 45, 252028 Kyev, Ukraine
© EDP Sciences 1998
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-75-Pr3-78
DOI: 10.1051/jp4:1998318
Some peculiarities of low temperature conductivity of silicon diodes
Y.M. Shwarts, P.S. Smertenko, V.N. Sokolov and M.M. ShwartsInstitute of Semiconductor Physics, National Academy of Science of Ukraine, Prospekt Nauki 45, 252028 Kyev, Ukraine
Abstract
The forward current-voltage (I-V) characteristics of the n+-p silicon diodes, B-doped with impurity density p=2.1017 cm-3 and P-doped with impurity density n=2.1020 cm-3, have been investigated in the temperature range from 4.2 K to 293 K. The peculiarities of the low-temperature conductivity of diodes have been studied by the novel differential technique of experimental results treatment. The ranges of power-like and exponential dependencies of the I-V curves have been determined. Different physical mechanisms responsible for the formation of peculiarities of the low-temperature I-V characteristics have briefly been discussed.
© EDP Sciences 1998