| Numéro |
J. Phys. IV
Volume 05, Numéro C3, Avril 1995
37ème Colloque de Métallurgie de l'INSTNMicrostructures et Recristallisation |
|
|---|---|---|
| Page(s) | C3-261 - C3-266 | |
| DOI | https://doi.org/10.1051/jp4:1995324 | |
37ème Colloque de Métallurgie de l'INSTN
Microstructures et Recristallisation
J. Phys. IV 05 (1995) C3-261-C3-266
DOI: 10.1051/jp4:1995324
1 Laboratoire d'Electrochimie et de Chimie Analytique, Unité Associée au CNRS, Ecole Nationale Supérieure de Chimie de Paris, 11 rue Pierre et Marie Curie, 75231 Paris cedex 05, France
2 UPR 15 du CNRS "Physique des Liquides et Electrochimie", Université Pierre et Marie Curie, 75252 Paris cedex 05, France
3 Author of correspondence
© EDP Sciences 1995
Microstructures et Recristallisation
J. Phys. IV 05 (1995) C3-261-C3-266
DOI: 10.1051/jp4:1995324
Chemical Deposition of Zinc Hydroxosulfide thin Films from Zinc (II) - Ammonia-Thiourea Solutions
B. Mokili1, M. Froment2 and D. Lincot31 Laboratoire d'Electrochimie et de Chimie Analytique, Unité Associée au CNRS, Ecole Nationale Supérieure de Chimie de Paris, 11 rue Pierre et Marie Curie, 75231 Paris cedex 05, France
2 UPR 15 du CNRS "Physique des Liquides et Electrochimie", Université Pierre et Marie Curie, 75252 Paris cedex 05, France
3 Author of correspondence
Abstract
The growth of ZnS films from ammonia solutions using thiourea as a sulfur precursor has been investigated. In situ growth kinetic studies have been performed by means of the quartz crystal microbalance (QCM) technique. The experiments have been carried out in pH buffered conditions (pH≈11) and the effect of the addition of amines has been investigated. The film are characterized by various techniques (Optical, Rutherford Back Scattering, Transmission Electron Microscopy). The composition of zinc hydroxosulfide is ranging between almost pure ZnS to mainly Zn(OH)2 depending on the deposition conditions.
© EDP Sciences 1995