| Numéro |
J. Phys. IV France
Volume 05, Numéro C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
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| Page(s) | C5-1141 - C5-1148 | |
| DOI | https://doi.org/10.1051/jphyscol:19955135 | |
J. Phys. IV France 05 (1995) C5-1141-C5-1148
DOI: 10.1051/jphyscol:19955135
Morphology and Thermal Stability of Me-Si-N (Me=Re, W, Ta) for Microelectronics
A.-M. Dutron1, E. Blanquet1, V. Ghetta1, R. Madar2 and C. Bernard11 INPG, ENSEEG, LTPCM, BP. 75, 38402 Saint-Martin-d'Hères, France
2 INPG, ENSPG, LMPG, BP. 46, 38402 Saint-Martin-d'Hères, France
Abstract
Low pressure chemical vapor deposition (LPCVD) of Me-Si-N (Me= Re, W, Ta) thin films were investigated for use as diffusion barrier between Cu overlayer and oxidized silicon substrates. Their "amorphous" or nanocrystalline structure is expected to provide better performance than usual polycrystalline barriers. For the CVD process, gaseous precursors were silane, in situ fabricated metal chloride, ammonia, hydrogen and argon. Preliminary thermodynamic simulations of the Me-Si-N and the CVD Me-Si-N-Cl-H-Ar systems (Me=Re, W, Ta), were combined to the experimental study. The Re-Si-N and W-Si-N layers crystallization temperature was found to be around 1173 K after annealing in vacuum by Rapid Thermal Annealing. Their morphology, thermal stability and resistivity were evaluated as a function of annealing temperature.
© EDP Sciences 1995