| Numéro |
J. Phys. IV France
Volume 11, Numéro PR11, Décembre 2001
International Conference on Thin Film Deposition of Oxide Multilayers Hybrid Structures
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| Page(s) | Pr11-77 - Pr11-81 | |
| DOI | https://doi.org/10.1051/jp4:20011112 | |
J. Phys. IV France 11 (2001) Pr11-77-Pr11-81
DOI: 10.1051/jp4:20011112
Substrate dependent growth of highly conductive RuO2 films
K. Fröhlich1, D. Machajdik1, V. Cambel1, R. Luptak1, S. Pignard2, F. Weiss2, P. Baumann3 and J. Lindner31 Institute of Electrical Engineering, SAS, Dubravska Cesta 9, 84239 Bratislava, Slovakia
2 LMGP, ENSPG, UMR 5628 du CNRS, BP. 46, 38402 Saint-Martin-d'Hères, France
3 AIXTRON AG, Kackertstr. 15-17, 52072 Aachen, Germany
Abstract
We have prepared thin RuO2 films by thermal evaporation metal organic chemical vapour deposition on r-plane Al2O3, MgO, LaAlO3 and SrTiO3 single crystal substrates. The films were grown at deposition temperature TD = 500 °C. X-ray diffraction analysis show different type of preferred growth, depending on a substrate. Atomic force microscopy revealed typical surface morphology for each type of substrate. Room temperature resistivity of the films on various substrates varied between 30 and 40 µΩcm. The best parameters were obtained for epitaxialy grown RuO2 film on the r-plane cut Al2O3 substrate with a room temperature resistivity about 30 µΩcm and residual resistivity ratio (resistivity ratio between room temperature and 4.2 K) close to30.
© EDP Sciences 2001