| Numéro |
J. Phys. IV France
Volume 06, Numéro C5, Septembre 1996
International Field Emission SocietyIFES'96 Proceedings of the 43rd International Field Emission Symposium |
|
|---|---|---|
| Page(s) | C5-129 - C5-134 | |
| DOI | https://doi.org/10.1051/jp4:1996521 | |
International Field Emission Society
IFES'96
Proceedings of the 43rd International Field Emission Symposium
J. Phys. IV France 06 (1996) C5-129-C5-134
DOI: 10.1051/jp4:1996521
1 Institute of Spectroscopy, 142092 Troitsk, Moscow Region, Russia
2 Institute of Crystallography, 1l7333 Moscow, Russia
3 A.F. Ioffe Institute of Physics and Technology, 194021 St. Petersburg, Russia
© EDP Sciences 1996
IFES'96
Proceedings of the 43rd International Field Emission Symposium
J. Phys. IV France 06 (1996) C5-129-C5-134
DOI: 10.1051/jp4:1996521
Field - and Photoassisted Field Emission Studies of Calcium Fluoride Coated Silicon Tips
V.N. Konopsky1, V.V. Zhirnov2, N.S. Sokolov3, J.C. Alvarez3, E.I. Givargizov2, L.V. Bormatova2, V.S. Letokhov1 and S.K. Sekatskii11 Institute of Spectroscopy, 142092 Troitsk, Moscow Region, Russia
2 Institute of Crystallography, 1l7333 Moscow, Russia
3 A.F. Ioffe Institute of Physics and Technology, 194021 St. Petersburg, Russia
Abstract
Measurements of field emission current-voltage and Fowler-Nordheim characteristics of Si tips covered by 100 nm-thick CaF2 epitaxial layers have been for the first time performed. It was found that in spite of dielectric nature of the coating, the tips demonstrate high emissivity comparable with the diamond coated tips. Results of high resolution photoassisted field emission investigations of CaF2/Si structures are presented.
© EDP Sciences 1996