| Numéro |
J. Phys. IV France
Volume 12, Numéro 3, May 2002
|
|
|---|---|---|
| Page(s) | 67 - 70 | |
| DOI | https://doi.org/10.1051/jp420020038 | |
J. Phys. IV France 12 (2002) Pr3-67
DOI: 10.1051/jp420020038
Ge semiconductor devices for cryogenic power electronics - II
R.R. Ward1, W.J. Dawson1, R.K. Kirschman1, O. Mueller2, R.L. Patterson3, J.E. Dickman3 and A. Hammoud41 GPD Optoelectronics Corp., 7 Manor Parkway, Salem, New Hampshire 03079, U.S.A.
2 LTE, Low Temperature Electronics, Ballston Lake, New York 12019, U.S.A.
3 NASA Glenn Research Center, Cleveland, Ohio 44135, U.S.A.
4 QSS Group Inc., Cleveland, Ohio, U.S.A.
Abstract
We have begun investigation and development of cryogenic semiconductor power devices (diodes, bipolar transistors and field-effect
transistors) based on germanium. The motivation is NASA's interest in electronics that can operate down to deep cryogenic
temperatures (as low as
K) for exploration of the outer planets and other Solar System bodies that present cold environments as well as for future
space observatories. There are also potential applications related to cryogenic/superconducting motors and generators and
power distribution and storage. We have characterized available Ge diodes and bipolar transistors at cryogenic temperatures
and have begun examining MIS (metal-insulator-semiconductor) capacitors on Ge. Our investigations show that all these types
of devices can operate from room temperature down to 20 K or lower.
© EDP Sciences 2002