| Numéro |
J. Phys. IV France
Volume 12, Numéro 3, May 2002
|
|
|---|---|---|
| Page(s) | 3 - 10 | |
| DOI | https://doi.org/10.1051/jp420020026 | |
J. Phys. IV France 12 (2002) Pr3-3
DOI: 10.1051/jp420020026
SiGe Hetero FETs on silicon at cryogenic temperature
F. Aniel1, M. Enciso-Aguilar1, N. Zerounian1, L. Giguerre1, P. Crozat1, R. Adde1, M. Zeuner2, G. Höck2, T. Hackbarth2, H.-J. Herzog1 and U. König21 Institut d'Électronique Fondamentale, Université Paris-Sud, 91405 Orsay, France
2 Daimler Chrysler Research Center, Wilhelm-Runge-Str. 11, 89081 Ulm, Germany
Abstract
Better transport properties and band gap engineering give a growing importance to SiGe alloy technologies in microelectronics.
Transport properties, performances and potential of SiGe hetero FETs at cryogenic temperatures are reviewed focussing on RF
and low noise.
© EDP Sciences 2002