J. Phys. IV France
Volume 132, March 2006
Page(s) 329 - 336
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 329-336

DOI: 10.1051/jp4:2006132063

Raman active modes of one-, two-, and three-phonon processes in the most important compounds and semiconductors with the rhombic, tetragonal, regular, trigonal, and hexagonal structures

H.W. Kunert1, J. Barnas2, D.J. Brink1 and J. Malherbe1

1  Department of Physics, University of Pretoria, 0001 Pretoria, South Africa
2  Department of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznan, Poland

Based on the group theoretical methods we have derived selection rules for the first-, second-, and third-order Raman active modes in about one hundred important compounds. We have considered the most important twenty eight space groups of such compounds like high temperature superconductors, and semiconductors (Si, Ge, GaN, ZnO, GaAs, CdTe, InSb, CdS, and many others). Comprehensive tables of these compounds and their symmetries, together with the Raman selection rules are presented. Experimentally, we have performed the inelastic light scattering measurements. Several multi-phonon transitions in GaN and ZnO are monitored and group-theoretically assigned according to the derived selection rules.

© EDP Sciences 2006