J. Phys. IV France
Volume 132, March 2006
Page(s) 315 - 319
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 315-319

DOI: 10.1051/jp4:2006132060

The properties of GaInP/GaAs heterostructures as a function of growth temperature

C. Pelosi1, G. Attolini1, M. Bosi1, E. Martín2, O. Martinez2, L.F. Sanz2, J. Jiménez2 and T. Prutskij3

1  IMEM-CNR Institute, Parco Area Delle Scienze, 37/A Fontanini, 43010 Parma, Italy
2  Department Departamento de Física de la Materia Condensada, Escuela Técnica Superior de Ingenieros Industriales, Paseo del Cauce s/n, 47011 Valladolid, Spain
3  Instituto de Ciencias, BUAP, Apdo postal 207, 7200, Puebla, Pue., Mexico

In order to find the best conditions under which ordering process is reduced InGaP layers were grown on GaAs substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) at low pressure in the temperature range between 525 and 600 $^{\circ}$C. Because the metal organic cracking process was affected by temperature change the ratio between metal organic TriMethyl Gallium (TMG) and TriMethyl Indium (TMI) has to be tuned for every temperature, while maintaining the same reduced pressure of 60 mbar. The growth rate and the gaseous TMG/TMI ratio giving the match to GaAs are reported as a function of the growth temperature. Cathodoluminescence (CL) and $\mu $-Raman analysis were used to understand the contributions of composition fluctuations, strain, Cu-Pt type ordering on the properties of the layers.

© EDP Sciences 2006