C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 311-314
Ordered silicon structures on silver (100) at 230°CC. Leandri1, B. Aufray1, 0, G. Le Lay1, C. Girardeaux2, C. Ottaviani3 and A. Cricenti3
1 CRMCN-CNRS, Campus de Luminy, Case 913, 13288 Marseille Cedex 09, France
2 L2MP, Faculté de Saint Jérôme, Case 142, 13397 Marseille Cedex 20, France
3 Instituto di Struttura della Materia, CNR, Via Fosso del Cavaliere, 00133 Rome, Italy
The growth of silicon at 230C on the silver (100) surface has been studied by Auger Electron Spectroscopy (AES), Low Energy Electron Diffraction (LEED) and Photo Electron Spectroscopy (PES). At this temperature, the growth starts with the formation of one complete monolayer showing a p() superstructure. Beyond, the p() evolves towards a "complex" superstructure (which has not been indexed) corresponding to the formation of silicon islands. Surprisingly, the PES results reveal that Si presents a strong metallic character at least up to 1.7 ML.
© EDP Sciences 2006