J. Phys. IV France
Volume 132, March 2006
Page(s) 295 - 299
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 295-299

DOI: 10.1051/jp4:2006132056

Polarized photoluminescence of the of GaInP2 layers grown on GaAs and Ge substrates by MOVPE technique

T. Prutskij1, C. Pelosi2 and R. Brito-Orta3

1  Instituto de Ciencias, BUAP, 72000 Puebla, Pue., México
2  IMEM/CNR, 43010 Parma, Italy
3  Instituto de Física BUAP, 72570 Puebla, Pue., México

Photoluminescent properties of GaInP2 films grown by metal-organic vapor phase epitaxy (MOVPE) on two different substrates (GaAs and Ge) are studied. The grown GaInP2 films were nearly lattice matched to GaAs, had the same thickness of approximately 0.5 $\mu $m and different values of ordering parameter. Photoluminescence (PL) measurements were performed in a wide temperature range (10 - 300 K) for polarization of the emitted radiation along the [011] and [ 0 $\overline 1 $1] directions. The temperature dependence of the photoluminescence intensity ratio for two polarizations was calculated and found experimentally. To estimate the value of the energy separation between the heavy-hole and light-hole bands a simulation of the spectra was realized using parabolic bands and Boltzmann statistics.

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